DMN62D0LFB-7B

Diodes Incorporated

DMN62D0LFB-7B

Datasheet

Analog & Power

MOSFET N-CH 60V 100MA 3-DFN

Active3-UFDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs2Ohm @ 100mA, 4V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs0.45 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds32 pF @ 25 V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id1V @ 250µA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4V
Current - Continuous Drain (Id) @ 25°C100mA (Ta)
Max Power Dissipation470mW (Ta)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case3-UFDFN
Supplier Device PackageX1-DFN1006-3

Environmental

Operating Temperature-55°C ~ 150°C (TJ)