DMN61D8LVT-13

Diodes Incorporated

DMN61D8LVT-13

Datasheet

Analog & Power

MOSFET 2N-CH 60V 0.63A TSOT26

ActiveSOT-23-6 Thin, TSOT-23-6Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs1.8Ohm @ 150mA, 5V
Base Product NumberDMN61
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs0.74nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds12.9pF @ 12V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2V @ 1mA

Electrical

Drain-to-Source Voltage60V
Current - Continuous Drain (Id) @ 25°C630mA
Power - Max820mW

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device PackageTSOT-26

Environmental

Operating Temperature-55°C ~ 150°C (TJ)