DMN5040LSS-13

Diodes Incorporated

DMN5040LSS-13

Datasheet

Analog & Power

MOSFET N-CH 50V 5.2A 8SO T&R 2

Active8-SOIC (0.154", 3.90mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs40mOhm @ 4.5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds836 pF @ 30 V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
SeriesAutomotive, AEC-Q101
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 250µA

Electrical

Drain-to-Source Voltage50 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C5.2A (Ta)
Max Power Dissipation1.3W (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO

Environmental

Operating Temperature-55°C~150°C(TJ)