DMN3900UFA-7B

Diodes Incorporated

DMN3900UFA-7B

Datasheet

Analog & Power

MOSFET N-CH 30V 550MA 3DFN

Active3-XFDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs760mOhm @ 200mA, 4.5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds42.2 pF @ 25 V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id950mV @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C550mA (Ta)
Max Power Dissipation390mW (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case3-XFDFN
Supplier Device PackageX2-DFN0806-3

Environmental

Operating Temperature-55°C~150°C(TJ)