DMN33D8LVQ-13

Diodes Incorporated

DMN33D8LVQ-13

Datasheet

Analog & Power

MOSFET 2N-CH 30V 0.35A SOT563

ActiveSOT-563, SOT-666Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs2.4Ohm @ 250mA, 10V
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs1.23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds48pF @ 5V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.5V @ 100µA

Electrical

Drain-to-Source Voltage30V
Current - Continuous Drain (Id) @ 25°C350mA (Ta)
Power - Max430mW (Ta)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseSOT-563, SOT-666
Supplier Device PackageSOT-563

Environmental

GradeAutomotive
Operating Temperature-55°C ~ 150°C (TJ)
QualificationAEC-Q101