DMN33D8LT-7

Diodes Incorporated

DMN33D8LT-7

Datasheet

Analog & Power

MOSFET N-CH 30V 115MA SOT523

ActiveSOT-523Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs5Ohm @ 10mA, 4V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs0.55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds48 pF @ 5 V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id1.5V @ 100µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4V
Current - Continuous Drain (Id) @ 25°C115mA (Ta)
Max Power Dissipation240mW (Ta)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseSOT-523
Supplier Device PackageSOT-523

Environmental

Operating Temperature-55°C ~ 150°C (TJ)