DMN3190LDW-7

Diodes Incorporated

DMN3190LDW-7

Datasheet

Analog & Power

MOSFET 2N-CH 30V 1A SOT363

Active6-TSSOP, SC-88, SOT-363Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs190mOhm @ 1.3A, 10V
Base Product NumberDMN3190
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds87pF @ 20V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.8V @ 250µA

Electrical

Drain-to-Source Voltage30V
Current - Continuous Drain (Id) @ 25°C1A
Power - Max320mW

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSOT-363

Environmental

Operating Temperature-55°C ~ 150°C (TJ)