DMN30H4D0LFDE-7

Diodes Incorporated

DMN30H4D0LFDE-7

Datasheet

Analog & Power

MOSFET N-CH 300V 550MA 6UDFN

Active6-PowerUDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs4Ohm @ 300mA, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs7.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds187.3 pF @ 25 V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.8V @ 250µA

Electrical

Drain-to-Source Voltage300 V
Drive Voltage (Max Rds On, Min Rds On)2.7V, 10V
Current - Continuous Drain (Id) @ 25°C550mA (Ta)
Max Power Dissipation630mW (Ta)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case6-PowerUDFN
Supplier Device PackageU-DFN2020-6 (Type E)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)