DMN3060LCA3-7

Diodes Incorporated

DMN3060LCA3-7

Datasheet

Analog & Power

MOSFET N-CH 30V 3.9A X4DSN1006-3

Active3-XFDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs60mOhm @ 500mA, 8V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs1.677 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds192 pF @ 15 V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id1.1V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 8V
Current - Continuous Drain (Id) @ 25°C3.9A (Ta)
Max Power Dissipation790mW

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case3-XFDFN
Supplier Device PackageX4-DSN1006-3

Environmental

Operating Temperature-55°C ~ 150°C (TJ)