DMN3035LWN-13

Diodes Incorporated

DMN3035LWN-13

Datasheet

Analog & Power

MOSFET 2N-CH 5.5A 8VDFN

Active8-PowerVDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs35mOhm @ 4.8A, 10V
Base Product NumberDMN3035
Configuration2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs4.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds399pF @ 15V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2V @ 250µA

Electrical

Current - Continuous Drain (Id) @ 25°C5.5A (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerVDFN
Supplier Device PackageV-DFN3020-8

Environmental

Operating Temperature-55°C ~ 150°C (TJ)