DMN3033LDM-7

Diodes Incorporated

DMN3033LDM-7

Datasheet

Analog & Power

MOSFET N-CH 30V 6.9A SOT-26

ActiveSOT-23-6Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs33mOhm @ 6.9A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds755 pF @ 10 V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.1V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C6.9A (Ta)
Max Power Dissipation2W (Ta)

Mechanical

Package / CaseSOT-23-6
Supplier Device PackageSOT-26

Environmental

Operating Temperature-55°C ~ 150°C (TJ)