DMN3023L-13

Diodes Incorporated

DMN3023L-13

Datasheet

Analog & Power

MOSFET N-CH 30V 6.2A SOT23

ActiveTO-236-3, SC-59, SOT-23-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs25mOhm @ 4A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs18.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds873 pF @ 15 V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id1.8V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 10V
Current - Continuous Drain (Id) @ 25°C6.2A (Ta)
Max Power Dissipation900mW (Ta)

Mechanical

PackageTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23-3

Environmental

Operating Temperature-55°C~155°C(TJ)