DMN3016LPS-13

Diodes Incorporated

DMN3016LPS-13

Datasheet

Analog & Power

MOSFET N-CH 30V 10.8A PWRDI5060

Active8-PowerTDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs12mOhm @ 20A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs25.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1415 pF @ 15 V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C10.8A (Ta)
Max Power Dissipation1.18W (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerTDFN
Supplier Device PackagePowerDI5060-8

Environmental

Operating Temperature-55°C~150°C(TJ)