DMN3015LSD-13

Diodes Incorporated

DMN3015LSD-13

Datasheet

Analog & Power

MOSFET 2N-CH 30V 8.4A 8SO

Active8-SOIC (0.154", 3.90mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs15mOhm @ 12A, 10V
Base Product NumberDMN3015
Configuration2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs25.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1415pF @ 15V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage30V
Current - Continuous Drain (Id) @ 25°C8.4A (Ta)
Power - Max1.2W

Mechanical

Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO

Environmental

Operating Temperature-55°C ~ 150°C (TJ)