DMN2600UFB-7

Diodes Incorporated

DMN2600UFB-7

Datasheet

Analog & Power

MOSFET N-CH 25V 1.3A 3DFN

Active3-UFDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs350mOhm @ 200mA, 4.5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs0.85 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds70.13 pF @ 15 V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id1V @ 250µA

Electrical

Drain-to-Source Voltage25 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C1.3A (Ta)
Max Power Dissipation540mW (Ta)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case3-UFDFN
Supplier Device PackageX1-DFN1006-3

Environmental

Operating Temperature-55°C ~ 150°C (TJ)