DMN2501UFB4-7

Diodes Incorporated

DMN2501UFB4-7

Datasheet

Analog & Power

MOSFET N-CH 20V 1A X2-DFN1006-3

Active3-XFDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs400mOhm @ 600mA, 4.5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds82 pF @ 16 V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id1V @ 250µA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C1A (Ta)
Max Power Dissipation500mW (Ta)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case3-XFDFN
Supplier Device PackageX2-DFN1006-3

Environmental

Operating Temperature-55°C ~ 150°C (TJ)