DMN2310UFB4-7B

Diodes Incorporated

DMN2310UFB4-7B

Datasheet

Analog & Power

MOSFET BVDSS: 8V~24V X2-DFN1006

Active3-XFDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs175mOhm @ 1A, 4.5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds38 pF @ 10 V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id950mV @ 250µA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C2.1A (Ta)
Max Power Dissipation710mW (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case3-XFDFN
Supplier Device PackageX2-DFN1006-3

Environmental

Operating Temperature-55°C ~ 150°C (TJ)