DMN2310U-7

Diodes Incorporated

DMN2310U-7

Datasheet

Analog & Power

MOSFET BVDSS: 8V~24V SOT23 T&R 3

ActiveTO-236-3, SC-59, SOT-23-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs175mOhm @ 300mA, 4.5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds38 pF @ 10 V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id950mV @ 250µA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C1.6A (Ta)
Max Power Dissipation480mW (Ta)

Mechanical

PackageTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23-3

Environmental

Operating Temperature-55°C~150°C(TJ)