DMN2080UCB4-7

Diodes Incorporated

DMN2080UCB4-7

Datasheet

Analog & Power

MOSFET N-CH 20V 3A X2-WLB0606-4

Active4-XFBGA, WLBGAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs56mOhm @ 1A, 4.5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs7.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds540 pF @ 10 V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id1V @ 250µA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C3A (Ta)
Max Power Dissipation710mW

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case4-XFBGA, WLBGA
Supplier Device PackageX2-WLB0606-4

Environmental

Operating Temperature-55°C ~ 150°C (TJ)