DMN2058U-7

Diodes Incorporated

DMN2058U-7

Datasheet

Analog & Power

MOSFET N-CH 20V 4.6A SOT23-3

ActiveTO-236-3, SC-59, SOT-23-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs35mOhm @ 6A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs7.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds281 pF @ 10 V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id1.2V @ 250µA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 10V
Current - Continuous Drain (Id) @ 25°C4.6A (Ta)
Max Power Dissipation1.13W

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23-3

Environmental

Operating Temperature-55°C ~ 150°C (TJ)