DMN2053UQ-13

Diodes Incorporated

DMN2053UQ-13

Datasheet

Analog & Power

MOSFET BVDSS: 8V~24V SOT23 T&R 1

ActiveTO-236-3, SC-59, SOT-23-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs29mOhm @ 6A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds414 pF @ 10 V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id1.2V @ 250µA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 10V
Current - Continuous Drain (Id) @ 25°C6.5A (Ta)
Max Power Dissipation800mW (Ta)

Environmental

GradeAutomotive
Operating Temperature-55°C ~ 150°C (TJ)
QualificationAEC-Q101