DMN2050LFDB-7

Diodes Incorporated

DMN2050LFDB-7

Datasheet

Analog & Power

MOSFET 2N-CH 20V 3.3A 6UDFN

Active6-UDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs45mOhm @ 5A, 4.5V
Base Product NumberDMN2050
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds389pF @ 10V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1V @ 250µA

Electrical

Drain-to-Source Voltage20V
Current - Continuous Drain (Id) @ 25°C3.3A
Power - Max730mW

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case6-UDFN Exposed Pad
Supplier Device PackageU-DFN2020-6 (Type B)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)