DMN2029UVT-7

Diodes Incorporated

DMN2029UVT-7

Datasheet

Analog & Power

MOSFET N-CH 6.8A TSOT26

ActiveSOT-23-6 Thin, TSOT-23-6Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs24mOhm @ 6.2A, 4.5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs7.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds646 pF @ 10 V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±10V
Vgs(th) (Max) @ Id1.5V @ 250µA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C6.8A (Ta)
Max Power Dissipation700mW (Ta)

Mechanical

PackageTape & Reel (TR)
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device PackageTSOT-26

Environmental

Operating Temperature-55°C~150°C(TJ)