DMN2022UNS-7

Diodes Incorporated

DMN2022UNS-7

Datasheet

Analog & Power

MOSFET 2N-CH 20V 10.7A PWRDI3333

Active8-PowerVDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs10.8mOhm @ 4A, 4.5V
Base Product NumberDMN2022
Configuration2 N-Channel (Dual) Common Drain
Gate Charge (Qg) (Max) @ Vgs20.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1870pF @ 10V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1V @ 250µA

Electrical

Drain-to-Source Voltage20V
Current - Continuous Drain (Id) @ 25°C10.7A (Ta)
Power - Max1.2W

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerVDFN
Supplier Device PackagePowerDI3333-8 (Type UXB)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)