DMN2020LSN-7

Diodes Incorporated

DMN2020LSN-7

Datasheet

Analog & Power

MOSFET N-CH 20V 6.9A SC59-3

ActiveTO-236-3, SC-59, SOT-23-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs20mOhm @ 9.4A, 4.5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs11.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1149 pF @ 10 V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id1.5V @ 250µA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C6.9A (Ta)
Max Power Dissipation610mW (Ta)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSC-59-3

Environmental

Operating Temperature-55°C ~ 150°C (TJ)