DMN2016UTS-13

Diodes Incorporated

DMN2016UTS-13

Datasheet

Analog & Power

MOSFET 2N-CH 20V 8.58A 8TSSOP

Active8-TSSOP (0.173", 4.40mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs14.5mOhm @ 9.4A, 4.5V
Base Product NumberDMN2016
Configuration2 N-Channel (Dual) Common Drain
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs16.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1495pF @ 10V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1V @ 250µA

Electrical

Drain-to-Source Voltage20V
Current - Continuous Drain (Id) @ 25°C8.58A
Power - Max880mW

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package8-TSSOP

Environmental

Operating Temperature-55°C ~ 150°C (TJ)