DMN2016LHAB-7

Diodes Incorporated

DMN2016LHAB-7

Datasheet

Analog & Power

MOSFET 2N-CH 20V 7.5A 6UDFN

Active6-UDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs15.5mOhm @ 4A, 4.5V
Base Product NumberDMN2016
Configuration2 N-Channel (Dual) Common Drain
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs16nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1550pF @ 10V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.1V @ 250µA

Electrical

Drain-to-Source Voltage20V
Current - Continuous Drain (Id) @ 25°C7.5A
Power - Max1.2W

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case6-UDFN Exposed Pad
Supplier Device PackageU-DFN2030-6 (Type B)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)