DMN2014LHAB-7

Diodes Incorporated

DMN2014LHAB-7

Datasheet

Analog & Power

MOSFET 2N-CH 20V 9A 6UDFN

Active6-UFDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs13mOhm @ 4A, 4.5V
Base Product NumberDMN2014
Configuration2 N-Channel (Dual) Common Drain
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs16nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1550pF @ 10V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.1V @ 250µA

Electrical

Drain-to-Source Voltage20V
Current - Continuous Drain (Id) @ 25°C9A
Power - Max800mW

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case6-UFDFN Exposed Pad
Supplier Device PackageU-DFN2030-6 (Type B)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)