DMN2011UTS-13

Diodes Incorporated

DMN2011UTS-13

Datasheet

Analog & Power

MOSFET N-CH 20V 21A 8TSSOP

Active8-TSSOP (0.173", 4.40mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs11mOhm @ 7A, 4.5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2248 pF @ 10 V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id1V @ 250µA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C21A (Tc)
Max Power Dissipation1.3W (Ta)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package8-TSSOP

Environmental

Operating Temperature-55°C ~ 150°C (TJ)