DMN2011UFX-7

Diodes Incorporated

DMN2011UFX-7

Datasheet

Analog & Power

MOSFET 2N-CH 20V 12.2A 4VDFN

Active4-VFDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs9.5mOhm @ 10A, 4.5V
Base Product NumberDMN2011
Configuration2 N-Channel (Dual) Common Drain
Gate Charge (Qg) (Max) @ Vgs56nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds2248pF @ 10V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1V @ 250µA

Electrical

Drain-to-Source Voltage20V
Current - Continuous Drain (Id) @ 25°C12.2A (Ta)
Power - Max2.1W

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case4-VFDFN Exposed Pad
Supplier Device PackageV-DFN2050-4

Environmental

Operating Temperature-55°C ~ 150°C (TJ)