DMN2011UFDF-13

Diodes Incorporated

DMN2011UFDF-13

Datasheet

Analog & Power

MOSFET N-CH 20V 14.2A 6UDFN

Active6-UDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs9.5mOhm @ 7A, 4.5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2248 pF @ 10 V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id1V @ 250µA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C14.2A (Ta)
Max Power Dissipation2.1W (Ta)

Mechanical

Package / Case6-UDFN Exposed Pad
Supplier Device PackageU-DFN2020-6 (Type F)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)