DMN2009UCA4-7

Diodes Incorporated

DMN2009UCA4-7

Datasheet

Analog & Power

MOSFET 20V 10.3A X4-DSN1717-4

Active4-XFBGA, DSBGAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs11.9mOhm @ 2.5A, 4.5V
Base Product NumberDMN2009
FET FeatureStandard
Gate Charge (Qg) (Max) @ Vgs17.5nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds1780pF @ 10V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.4V @ 640µA

Electrical

Drain-to-Source Voltage20V
Current - Continuous Drain (Id) @ 25°C10.3A (Ta)
Power - Max900mW

Mechanical

PackageBulk
Package / Case4-XFBGA, DSBGA
Supplier Device PackageX4-DSN1717-4

Environmental

Operating Temperature-55°C ~ 150°C (TJ)