DMN2008LFU-13

Diodes Incorporated

DMN2008LFU-13

Datasheet

Analog & Power

MOSFET 2N-CH 20V 14.5A 6UDFN

Active6-UFDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs5.4mOhm @ 5.5A, 4.5V
Base Product NumberDMN2008
Configuration2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs42.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1418pF @ 10V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.5V @ 250µA

Electrical

Drain-to-Source Voltage20V
Current - Continuous Drain (Id) @ 25°C14.5A
Power - Max1W

Mechanical

PackageTape & Reel (TR)
Package / Case6-UFDFN Exposed Pad
Supplier Device PackageU-DFN2030-6 (Type B)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)