DMN2005LP4K-7

Diodes Incorporated

DMN2005LP4K-7

Datasheet

Analog & Power

MOSFET N-CH 20V 200MA 3DFN

Active3-XFDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs1.5Ohm @ 10mA, 4V
Base Product NumberDMN2005
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds41 pF @ 3 V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±10V
Vgs(th) (Max) @ Id900mV @ 100µA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4V
Current - Continuous Drain (Id) @ 25°C200mA (Ta)
Max Power Dissipation400mW (Ta)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case3-XFDFN
Supplier Device PackageX2-DFN1006-3

Environmental

Operating Temperature-65°C ~ 150°C (TJ)