DMN10H6D2LFDB-7

Diodes Incorporated

DMN10H6D2LFDB-7

Datasheet

Analog & Power

MOSFET 2N-CH 100V 0.27A 6UDFN

Active6-UDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs6Ohm @ 190mA, 10V
Base Product NumberDMN10
Configuration2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs1.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds41pF @ 50V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2V @ 1mA

Electrical

Drain-to-Source Voltage100V
Current - Continuous Drain (Id) @ 25°C270mA (Ta)
Power - Max700mW (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case6-UDFN Exposed Pad
Supplier Device PackageU-DFN2020-6 (Type B)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)