DMN10H170SVT-7

Diodes Incorporated

DMN10H170SVT-7

Datasheet

Analog & Power

MOSFET N-CH 100V 2.6A TSOT26

ActiveSOT-23-6 Thin, TSOT-23-6Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs160mOhm @ 5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1167 pF @ 25 V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 250µA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C2.6A (Ta)
Max Power Dissipation1.2W (Ta)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device PackageTSOT-26

Environmental

Operating Temperature-55°C ~ 150°C (TJ)