DMN10H170SFG-7

Diodes Incorporated

DMN10H170SFG-7

Datasheet

Analog & Power

MOSFET N-CH 100V PWRDI3333

Active8-PowerVDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs122mOhm @ 3.3A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs14.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds870.7 pF @ 25 V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 250µA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C2.9A (Ta), 8.5A (Tc)
Max Power Dissipation940mW (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerVDFN
Supplier Device PackagePowerDI3333-8

Environmental

Operating Temperature-55°C~150°C(TJ)