DMN1019UVT-7

Diodes Incorporated

DMN1019UVT-7

Datasheet

Analog & Power

MOSFET N-CH 12V 10.7A TSOT26

ActiveSOT-23-6 Thin, TSOT-23-6Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs10mOhm @ 9.7A, 4.5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs50.4 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds2588 pF @ 10 V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id800mV @ 250µA

Electrical

Drain-to-Source Voltage12 V
Drive Voltage (Max Rds On, Min Rds On)1.2V, 4.5V
Current - Continuous Drain (Id) @ 25°C10.7A (Ta)
Max Power Dissipation1.73W (Ta)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device PackageTSOT-26

Environmental

Operating Temperature-55°C ~ 150°C (TJ)