DMN1017UCP3-7

Diodes Incorporated

DMN1017UCP3-7

Datasheet

Analog & Power

MOSFET N-CH 12V 7.5A X3DSN1010-3

Active3-XDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs17mOhm @ 5A, 3.3V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs16 nC @ 3.3 V
Input Capacitance (Ciss) (Max) @ Vds1503 pF @ 6 V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id1V @ 250µA

Electrical

Drain-to-Source Voltage12 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 3.3V
Current - Continuous Drain (Id) @ 25°C7.5A (Ta)
Max Power Dissipation1.47W

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case3-XDFN
Supplier Device PackageX3-DSN1010-3

Environmental

Operating Temperature-55°C ~ 150°C (TJ)