DMN1016UCB6-7

Diodes Incorporated

DMN1016UCB6-7

Analog & Power

MOSFET N-CH 12V 5.5A U-WLB1510-6

Obsolete6-UFBGA, WLBGAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs20mOhm @ 1.5A, 4.5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs4.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds423 pF @ 6 V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id1V @ 250µA

Electrical

Drain-to-Source Voltage12 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C5.5A (Ta)
Max Power Dissipation920mW (Ta)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case6-UFBGA, WLBGA
Supplier Device PackageU-WLB1510-6

Environmental

Operating Temperature-55°C ~ 150°C (TJ)