DMN1008UFDF-7

Diodes Incorporated

DMN1008UFDF-7

Datasheet

Analog & Power

MOSFET N-CH 12V 12.2A 6UDFN

Active6-UDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs8mOhm @ 5A, 4.5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs23.4 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds995 pF @ 6 V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
SeriesAutomotive, AEC-Q101
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id1V @ 250µA

Electrical

Drain-to-Source Voltage12 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C12.2A (Ta)
Max Power Dissipation700mW (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case6-UDFN Exposed Pad
Supplier Device PackageU-DFN2020-6 (Type F)

Environmental

Operating Temperature-55°C~150°C(TJ)