DMJ7N70SK3-13

Diodes Incorporated

DMJ7N70SK3-13

Analog & Power

MOSFET N-CH 700V 3.9A TO252

ObsoleteTO-252-3, DPak (2 Leads + Tab), SC-63Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs1.25Ohm @ 2.5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs13.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds351 pF @ 50 V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage700 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C3.9A (Tc)
Max Power Dissipation28W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageTO-252-3

Environmental

Operating Temperature-55°C ~ 150°C (TJ)