DMJ70H900HJ3

Diodes Incorporated

DMJ70H900HJ3

Datasheet

Analog & Power

MOSFET N-CH 700V 7A TO251

ActiveTO-251-3 Short Leads, IPak, TO-251AAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs900mOhm @ 1.5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs18.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds603 pF @ 50 V
ManufacturerDiodes Incorporated
Mounting TypeThrough Hole
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage700 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C7A (Tc)
Max Power Dissipation68W (Tc)

Mechanical

PackageTube

Environmental

GradeAutomotive
Operating Temperature-55°C ~ 150°C (TJ)
QualificationAEC-Q101