DMJ70H600HCT

Diodes Incorporated

DMJ70H600HCT

Analog & Power

MOSFET BVDSS: 651V~800V TO220AB

ObsoleteTO-220-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs600mOhm @ 2.4A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs17.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds570 pF @ 25 V
ManufacturerDiodes Incorporated
Mounting TypeThrough Hole
Product StatusObsolete
SeriesAutomotive, AEC-Q101
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5V @ 250µA

Electrical

Drain-to-Source Voltage700 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C8.5A (Tc)
Max Power Dissipation2.3W (Ta), 104W (Tc)

Mechanical

PackageTube
Package / CaseTO-220-3
Supplier Device PackageTO-220AB (Type TH)

Environmental

Operating Temperature-55°C~150°C(TJ)