DMJ70H1D4SJ3

Diodes Incorporated

DMJ70H1D4SJ3

Datasheet

Analog & Power

MOSFET BVDSS: 651V~800V TO251 TU

ActiveTO-251-3 Short Leads, IPak, TO-251AAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs1.4Ohm @ 1A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds273 pF @ 100 V
ManufacturerDiodes Incorporated
Mounting TypeThrough Hole
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5V @ 250µA

Electrical

Drain-to-Source Voltage700 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C6.1A (Tc)
Max Power Dissipation78W (Tc)

Mechanical

PackageTube
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
Supplier Device PackageTO-251 (Type TH)

Environmental

Operating Temperature-55°C~150°C(TJ)