DMJ70H1D3SH3

Diodes Incorporated

DMJ70H1D3SH3

Analog & Power

MOSFET N-CH 700V 4.6A TO251

ObsoleteTO-251-3 Stub Leads, IPakAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs1.3Ohm @ 2.5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs13.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds351 pF @ 50 V
ManufacturerDiodes Incorporated
Mounting TypeThrough Hole
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage700 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C4.6A (Tc)
Max Power Dissipation41W (Tc)

Mechanical

PackageTube
Package / CaseTO-251-3 Stub Leads, IPak
Supplier Device PackageTO-251 (Type TH3)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)