DMHT10H032LFJ-13

Diodes Incorporated

DMHT10H032LFJ-13

Datasheet

Analog & Power

MOSFET 4N-CH 100V 6A 12VDFN

Active12-PowerVDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs33mOhm @ 6A, 10V
Base Product NumberDMHT10
Configuration4 N-Channel (Full Bridge)
Gate Charge (Qg) (Max) @ Vgs11.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds683pF @ 50V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage100V
Current - Continuous Drain (Id) @ 25°C6A (Ta)
Power - Max900mW

Mechanical

PackageTape & Reel (TR)
Package / Case12-PowerVDFN
Supplier Device PackageV-DFN5045-12 (Type C)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)