DMHC10H170SFJ-13

Diodes Incorporated

DMHC10H170SFJ-13

Datasheet

Analog & Power

MOSFET 2N/2P-CH 100V 2.9A 12VDFN

Active12-VDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs160mOhm @ 5A, 10V
Base Product NumberDMHC10
Configuration2 N and 2 P-Channel (Full Bridge)
Gate Charge (Qg) (Max) @ Vgs9.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1167pF @ 25V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3V @ 250µA

Electrical

Drain-to-Source Voltage100V
Current - Continuous Drain (Id) @ 25°C2.9A, 2.3A
Power - Max2.1W

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case12-VDFN Exposed Pad
Supplier Device PackageV-DFN5045-12

Environmental

Operating Temperature-55°C ~ 150°C (TJ)