DMG6602SVT-7

Diodes Incorporated

DMG6602SVT-7

Datasheet

Analog & Power

MOSFET N/P-CH 30V 3.4A TSOT26

DiscontinuedSOT-23-6 Thin, TSOT-23-6Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs60mOhm @ 3.1A, 10V
Base Product NumberDMG6602
ConfigurationN and P-Channel
FET FeatureLogic Level Gate, 4.5V Drive
Gate Charge (Qg) (Max) @ Vgs13nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds400pF @ 15V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusNot For New Designs
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.3V @ 250µA

Electrical

Drain-to-Source Voltage30V
Current - Continuous Drain (Id) @ 25°C3.4A, 2.8A
Power - Max840mW

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device PackageTSOT-26

Environmental

Operating Temperature-55°C ~ 150°C (TJ)