DMG5802LFX-7

Diodes Incorporated

DMG5802LFX-7

Datasheet

Analog & Power

MOSFET 2N-CH 24V 6.5A 6DFN

Active6-VFDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs15mOhm @ 6.5A, 4.5V
Base Product NumberDMG5802
Configuration2 N-Channel (Dual) Common Drain
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs31.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1066.4pF @ 15V
ManufacturerDiodes Incorporated
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.5V @ 250µA

Electrical

Drain-to-Source Voltage24V
Current - Continuous Drain (Id) @ 25°C6.5A
Power - Max980mW

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case6-VFDFN Exposed Pad
Supplier Device PackageW-DFN5020-6

Environmental

Operating Temperature-55°C ~ 150°C (TJ)